Design of a 0.6-V 0.2-mW CMOS MEMS accelerometer

Abstract

This paper presents a low-voltage low-power monolithic complementary metal-oxide-semiconductor (CMOS) micro-electromechanical-system (MEMS) accelerometer design. This design utilizes low-voltage design techniques without using low-threshold devices or internal supply voltage boosting. The accelerometer, designed in the 0.18-μm CMOS MEMS process, contains the micro-mechanical structure, readout circuits, and a 16-bit delta-sigma analog-to-digital converter (ΔΣ ADC). It occupies an area of only 0.8 × 1 mm2 and draws 0.33 mA of current from a 0.6-V supply. The simulated sensitivity is 3000 LSB/g and the nonlinearity is 0.78% within the ±6 g sensing range.