{"title":"Cooling performance of silicon-based thermoelectric device on high power LED","authors":"Jen-Hau Cheng, Chun-Kai Liu, Y. Chao, R. Tain","doi":"10.1109/ICT.2005.1519885","DOIUrl":null,"url":null,"abstract":"In this paper, a new thermal management application of silicon-based thermoelectric (TE) device on high power LED is unveiled. The silicon-based TE device is fabricated by the microfabrication and flip-chip assembly process. Thermal images photographed by infrared camera demonstrate the cooling function of the silicon-based TE devices. Because the LED chip is encapsulated in a package, the junction temperature of the LED chip cannot be measured directly. An electrical-thermal conversion method is used to measure the junction temperature of the high power LED. The result shows that the silicon-based thermoelectric device can effectively reduce the thermal resistance of the high power LED.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"83","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.2005.1519885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 83
Abstract
In this paper, a new thermal management application of silicon-based thermoelectric (TE) device on high power LED is unveiled. The silicon-based TE device is fabricated by the microfabrication and flip-chip assembly process. Thermal images photographed by infrared camera demonstrate the cooling function of the silicon-based TE devices. Because the LED chip is encapsulated in a package, the junction temperature of the LED chip cannot be measured directly. An electrical-thermal conversion method is used to measure the junction temperature of the high power LED. The result shows that the silicon-based thermoelectric device can effectively reduce the thermal resistance of the high power LED.