10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EMICC.2008.4772354

F. Scappaviva, R. Cignani, C. Florian, G. Vannini, F. Filicori, M. Feudale

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引用次数: 18

Abstract

This paper describes the design of a GaAs monolithic high power amplifier at Ku band. The chip delivers about 40 dBm of saturated output power, in CW operating conditions, at 11.7 GHz central frequency, with 17% of bandwidth. The saturated power gain is 12.4 dB with 2 dB gain flatness across the application bandwidth while the chip power added efficiency is estimated between 33% to 47%. The amplifier is designed to be used as final stage of a downlink satellite transmitter for Tracking Telemetry & Command system. A commercial power p-HEMT process capable of handling a power density higher than 1 W/mm has been selected for the MMIC design. Due to the space application, special attention must be put on the process and MMIC reliability: to this aim performances must be guaranteed in de-rated conditions respect to the process maximum ratings and, in addition, the channel temperature of the active devices must be kept within the value established by Space Requirements and carefully controlled. This makes the design objective very tight. The MMIC power amplifier design and some measurement results are presented in the paper.

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用于空间应用的10瓦高效率GaAs MMIC功率放大器

介绍了一种Ku波段GaAs单片高功率放大器的设计。在连续波工作条件下，该芯片在11.7 GHz中心频率下提供约40 dBm的饱和输出功率，带宽为17%。饱和功率增益为12.4 dB，在整个应用带宽上增益平坦度为2 dB，而芯片功率附加效率估计在33%至47%之间。该放大器设计用于跟踪遥测和指挥系统的下行卫星发射机的最后一级。MMIC设计选择了能够处理高于1 W/mm功率密度的商用功率p-HEMT工艺。由于空间应用，必须特别注意工艺和MMIC的可靠性:为此，必须保证在工艺最大额定值的降级条件下的性能，此外，有源设备的通道温度必须保持在空间要求确定的范围内并仔细控制。这使得设计目标非常紧凑。文中给出了MMIC功率放大器的设计和一些测量结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2008 European Microwave Integrated Circuit Conference

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