{"title":"Nonlinear Distortion in a Microwave High Power Amplifier","authors":"Bezoušek Pavel, D. Matousek, L. Rejfek","doi":"10.1109/RADIOELEK.2019.8733505","DOIUrl":null,"url":null,"abstract":"In this paper the high-power amplifier CGHV31500F designed for the radar S-Band application is studied. The amplifier module is based on GaN HEMT encapsulated internally matched transistor, delivering more than 500 W in a pulse regime. Nonlinear model of this amplifier was developed and nonlinear distortion of a standard radar signal and of possible future QAM signals are predicted.","PeriodicalId":336454,"journal":{"name":"2019 29th International Conference Radioelektronika (RADIOELEKTRONIKA)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 29th International Conference Radioelektronika (RADIOELEKTRONIKA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADIOELEK.2019.8733505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper the high-power amplifier CGHV31500F designed for the radar S-Band application is studied. The amplifier module is based on GaN HEMT encapsulated internally matched transistor, delivering more than 500 W in a pulse regime. Nonlinear model of this amplifier was developed and nonlinear distortion of a standard radar signal and of possible future QAM signals are predicted.
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