[Event-related potentials and memory capacity: 1. A comparison of intentional and incidental learning modes].

H J Heinze, T F Münte, D E Dietrich, S M Bartusch, M B Scholz
{"title":"[Event-related potentials and memory capacity: 1. A comparison of intentional and incidental learning modes].","authors":"H J Heinze,&nbsp;T F Münte,&nbsp;D E Dietrich,&nbsp;S M Bartusch,&nbsp;M B Scholz","doi":"","DOIUrl":null,"url":null,"abstract":"<p><p>Event-related brain potentials were recorded from healthy young adults during two paradigms calling for recall and recognition of previously presented words. In the first part of the study incidental learning was employed, i.e. the subject was unaware that he participated in a memory test and engaged in a semantic task instead. ERPs from the encoding phase were averaged according to whether a word was 1. subsequently recalled, 2. recognized or 3. neither recalled nor recognized. The intentional paradigm was identical in all respects except for the instructions to remember as many words as possible for subsequent memory testing. No semantic task was employed during intentional encoding. Both paradigms yielded significantly higher positivities for words which were later recalled.</p>","PeriodicalId":75812,"journal":{"name":"EEG-EMG Zeitschrift fur Elektroenzephalographie, Elektromyographie und verwandte Gebiete","volume":"21 2","pages":"82-6"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EEG-EMG Zeitschrift fur Elektroenzephalographie, Elektromyographie und verwandte Gebiete","FirstCategoryId":"1085","ListUrlMain":"","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Event-related brain potentials were recorded from healthy young adults during two paradigms calling for recall and recognition of previously presented words. In the first part of the study incidental learning was employed, i.e. the subject was unaware that he participated in a memory test and engaged in a semantic task instead. ERPs from the encoding phase were averaged according to whether a word was 1. subsequently recalled, 2. recognized or 3. neither recalled nor recognized. The intentional paradigm was identical in all respects except for the instructions to remember as many words as possible for subsequent memory testing. No semantic task was employed during intentional encoding. Both paradigms yielded significantly higher positivities for words which were later recalled.

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事件相关电位与记忆容量;有意学习模式与偶然学习模式的比较[j]。
在两种范式中,记录了健康年轻人的事件相关脑电位,要求回忆和识别先前呈现的单词。在研究的第一部分中,被试采用了附带学习,即被试没有意识到他参加了一个记忆测试,而是参加了一个语义任务。根据单词是否为1对编码阶段的erp进行平均。随后召回,2。认可或3。既不记得也不认识。除了要求在随后的记忆测试中记住尽可能多的单词外,意图范式在所有方面都是相同的。在有意编码过程中不使用语义任务。这两种范式对后来被回忆的单词都产生了显著更高的正性。
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