Differential distributed amplifier and oscillator in SiGe BiCMOS using close-packed interleaved on-chip transmission lines

Drew Guckenberger, Kevin T. Kornegay
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引用次数: 3

Abstract

A monolithic differential distributed amplifier using close-packed, shielded, meandered transmission lines and a delay-matched rotationally symmetric amplifier cell is implemented using a SiGe BiCMOS process with an f/sub T/ of 120 GHz. A broadband differential power gain of 7.5 dB is achieved with a bandwidth of 25 GHz, while consuming 30 mA from a 3.3 V supply. The amplifier can also be configured as a differential oscillator by connecting the input and output pads with wire bonds. This results in an oscillation frequency of 9.2 GHz with a phase noise of -103 dBc/Hz at a 1 MHz offset and single-ended output power of -6 dBm.
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采用密排交错片上传输线的SiGe BiCMOS差分分布式放大器和振荡器
采用120 GHz的f/sub /频率SiGe BiCMOS工艺,实现了一种单片差分分布式放大器,该放大器采用紧凑、屏蔽、弯曲的传输线和延迟匹配的旋转对称放大器单元。在带宽为25 GHz的情况下,实现了7.5 dB的宽带差分功率增益,同时从3.3 V电源消耗30 mA。放大器也可以配置为差分振荡器通过连接输入和输出垫与线键。在1mhz偏置时,振荡频率为9.2 GHz,相位噪声为-103 dBc/Hz,单端输出功率为-6 dBm。
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