Fully Integrated High-Frequency MEMS and CMOS Inertial Measurement Systems: Taking a Journey from Silicon to Silicon Carbide

Abstract

This paper presents the latest results obtained from high-frequency single-chip inertial measurement units (IMU) interfaced with a precision low-power application specific integrated circuits (ASIC). The silicon MEMS component is based on the HARPSS+ process manufactured and wafer-level packaged at a MEMS foundry. The ASIC is based on a 130nm CMOS process and includes the integration of an array of high-voltage charge pumps (20V) for dynamic tuning of the triaxial high-frequency resonant gyroscopes. When used in a low-profile wearable patch, the IMU enables the detection of mechano-acoustic cardiopulmonary sounds, chest wall motion, as well as user's body motion and position. The second part of the paper will discuss the use of monocrystalline silicon carbide (SiC) for the implementation of ultra-high-Q high-frequency IMUs. The opportunities and challenges related to SiC in implementing inertial sensors are outlined and latest results on the eigen-mode operation of AlN-on-Si resonant BAW gyros are presented.