{"title":"High speed low power optical gate driver for 2.5 GBit/s ATM switching networks","authors":"D. Martin, A. Konczykowska","doi":"10.1109/BIPOL.1995.493896","DOIUrl":null,"url":null,"abstract":"In this paper an optical gates matrix driver suitable for 2.5 GBit/s ATM switching networks is described. It enables gate switching with typical current up to 150 mA in less than 200 ps. Circuit was realised using a 50 GHz baseline GaAs-GaAlAs heterojunction bipolar transistor (HBT) technology with low power and high speed concurrent objectives.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper an optical gates matrix driver suitable for 2.5 GBit/s ATM switching networks is described. It enables gate switching with typical current up to 150 mA in less than 200 ps. Circuit was realised using a 50 GHz baseline GaAs-GaAlAs heterojunction bipolar transistor (HBT) technology with low power and high speed concurrent objectives.
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