{"title":"Design and Simulation of the Double-Snapback Dual Direction Silicon Controlled Rectifier Device with Embedded GGNMOS Structure","authors":"Yang Wang, Xiangliang Jin","doi":"10.1109/ICICM50929.2020.9292233","DOIUrl":null,"url":null,"abstract":"This work proposes a double-snapback dual direction silicon controlled rectifier(DS-DDSCR) electrostatic discharge protection(ESD) device by using the embedded GGNMOS structure. Based on the traditional SCR structure, it is improved by embedded structure and the double-snapback mechanism is used to achieve better voltage clamping capability. The working mechanism of proposed DS-DDSCR is simulated through equivalent circuit and two-dimensional device simulation. The device simulation results show that this double-snapback embedded structure can provide an effective design idea for ESD protection of standard BCD process.","PeriodicalId":364285,"journal":{"name":"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICM50929.2020.9292233","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work proposes a double-snapback dual direction silicon controlled rectifier(DS-DDSCR) electrostatic discharge protection(ESD) device by using the embedded GGNMOS structure. Based on the traditional SCR structure, it is improved by embedded structure and the double-snapback mechanism is used to achieve better voltage clamping capability. The working mechanism of proposed DS-DDSCR is simulated through equivalent circuit and two-dimensional device simulation. The device simulation results show that this double-snapback embedded structure can provide an effective design idea for ESD protection of standard BCD process.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
