Parametric Monte-Carlo Characterization of Si Ring Modulators

Youngkwan Jo, Yongjin Ji, Minkyu Kim, S. Lischke, C. Mai, L. Zimmermann, W. Choi
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Abstract

Monte-Carlo characterization based on the Si ring modulator equivalent circuit is performed for the modulation frequency responses based on experimentally determined key behavior model parameter distributions. Such Montel-Carlo characterization allows prediction of the statistical distribution of the performance metrics for Si photonic integrated circuit design.
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硅环调制器的参数蒙特卡罗表征
基于实验确定的关键行为模型参数分布,基于硅环调制器等效电路对调制频率响应进行蒙特卡罗表征。这种蒙特卡罗表征允许预测Si光子集成电路设计的性能指标的统计分布。
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