Ultra High Power Cooling Solution for 3D-ICs

C. J. Wu, S. Hsiao, J. Wang, W. H. Lin, C. W. Chang, T. Shao, C. Tung, Doug C. H. Yu
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引用次数: 5

Abstract

A direct silicon water cooling solution using fusion bonded silicon lid is proposed. It is successfully demonstrated as an effective cooling solution with total power >2600 W on a single SoC, equivalent to power density of 4.8 W/mm2. Low temperature logic chip to silicon lid fusion bonding, with trench/grid cooling structure cutting into silicon lid enables minimal thermal resistance between active device and cooling water and best cooling efficiency. Direct water cooling on logic chip silicon backside has also been demonstrated with power density better than 7 W/mm2.
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3d - ic超高功率散热解决方案
提出了一种采用熔合硅盖的直接硅水冷却方案。作为一种有效的散热解决方案,它在单个SoC上的总功率>2600 W,相当于4.8 W/mm2的功率密度。低温逻辑芯片与硅盖熔合,硅盖采用沟槽/栅格冷却结构,使有源器件与冷却水之间的热阻最小,冷却效率最佳。逻辑芯片硅背面的直接水冷也已被证明功率密度优于7 W/mm2。
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