Accurate BSIM4 MOS model extraction with Binning-Hybrid-Macro methodology

Abstract

An accurate BSIM4 parameter extraction with Binning-Hybrid-Macro (BHM) methodology has been developed for MOS transistor models. The basic idea of this method is to apply binning on a hybrid-macro model. The comparison between the BHM method and various model extraction methods is discussed. BHM method is more robust and easier to use besides its capability to produce more accurate roll-off fittings compared to other methods. The BHM extraction methodology has been demonstrated on actual silicon from 0.18μm CMOS technology. Accurate model fitting to the measured data has been achieved. The model extracted using BHM method has been tested and verified to be compatible with HSPICE and SPECTRE simulators.