{"title":"A novel FinFET with dynamic threshold voltage","authors":"Selwin Kumar Pushpadhas, D. Nair, Amit Gupta","doi":"10.1109/ICEMELEC.2014.7151218","DOIUrl":null,"url":null,"abstract":"Higher on-current (I<sub>dsat</sub>) and lower off-current (I<sub>off</sub>) can be achieved through dynamic threshold voltage (V<sub>th</sub>) in MOSFETs. The change in V<sub>th</sub> with gate bias is usually achieved through the body effect by connecting the gate terminal to the substrate in MOSFETs with heavily doped substrates. In this paper, we report the presence of dynamic V<sub>th</sub> even in FinFETs with undoped channels. In this case, the change in V<sub>th</sub> is due to modulation of the cross-sectional area of current flow. For the same I<sub>off</sub>, more than 10% increase in I<sub>dsat</sub> can be achieved in the proposed structure.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"641 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEMELEC.2014.7151218","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Higher on-current (Idsat) and lower off-current (Ioff) can be achieved through dynamic threshold voltage (Vth) in MOSFETs. The change in Vth with gate bias is usually achieved through the body effect by connecting the gate terminal to the substrate in MOSFETs with heavily doped substrates. In this paper, we report the presence of dynamic Vth even in FinFETs with undoped channels. In this case, the change in Vth is due to modulation of the cross-sectional area of current flow. For the same Ioff, more than 10% increase in Idsat can be achieved in the proposed structure.
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