E. Fox, N. O, D. Dykaar, T.J. Mantell, R. W. Sabila
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引用次数: 0
Abstract
In this work we describe two families of linear image sensors which incorporate pinned photodiode (PPD) photosites. In a PPD photosite the n/sup +/ region of the conventional photodiode is replaced by an n region and a shallow highly doped p region. The high quantum efficiencies associated with conventional photodiodes are maintained while allowing for large reductions in image lag and fixed pattern noise which are associated with conventional photodiodes.
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