{"title":"Study on magnetic and magneto-optical properties of Bi, Al (or Ga)-substituted garnet films for magneto-optical recording","authors":"Yongzong Zhou, D. Shen, F. Gan","doi":"10.1117/12.150642","DOIUrl":null,"url":null,"abstract":"Al and Ga-substituted Bi:DyIG films have been prepared on glass substrates by pyrolysis method. The magnetic and magneto-optical properties of Al or Ga-substituted garnet films have been investigated in detail. Al or Ga-substituted Bi:DyIG films have high coercive force and good Faraday hysteresis loops. At the wavelength of 510 nm, the Faraday rotation angle was about 8 degree(s)/micrometers for the optimum Al or Ga content of 1 or 0.7, respectively. For optimum Al and Ga content, the crystallization temperatures were about 700 and 675 degree(s)C, respectively. X-ray diffraction pattern showed that the film was polycrystalline garnet phase without preferred crystal orientation.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Storage and Information Data Storage","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.150642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Al and Ga-substituted Bi:DyIG films have been prepared on glass substrates by pyrolysis method. The magnetic and magneto-optical properties of Al or Ga-substituted garnet films have been investigated in detail. Al or Ga-substituted Bi:DyIG films have high coercive force and good Faraday hysteresis loops. At the wavelength of 510 nm, the Faraday rotation angle was about 8 degree(s)/micrometers for the optimum Al or Ga content of 1 or 0.7, respectively. For optimum Al and Ga content, the crystallization temperatures were about 700 and 675 degree(s)C, respectively. X-ray diffraction pattern showed that the film was polycrystalline garnet phase without preferred crystal orientation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
