{"title":"An analytical model of power bipolar transistor for circuit simulation","authors":"B. Fatemizadeh, P. Lauritzen","doi":"10.1109/CIPE.1996.612348","DOIUrl":null,"url":null,"abstract":"This paper presents a new bipolar junction transistor (BJT) modeling approach using an analytical method which provides sufficient accuracy for most power electronics applications with fast simulation times. This new analytical model includes all important physical effects: recombination in base and emitter; high injection; collector conductivity modulation; quasi-saturation; carrier velocity saturation; and displacement current.","PeriodicalId":126938,"journal":{"name":"5th IEEE Workshop on Computers in Power Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"5th IEEE Workshop on Computers in Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIPE.1996.612348","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a new bipolar junction transistor (BJT) modeling approach using an analytical method which provides sufficient accuracy for most power electronics applications with fast simulation times. This new analytical model includes all important physical effects: recombination in base and emitter; high injection; collector conductivity modulation; quasi-saturation; carrier velocity saturation; and displacement current.
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