Diagonal and vertical far-infrared transitions from quantum cascade emitters

S. Dhillon, A. Davies, D. D. Arnone, H. Beere, D. Ritchie, E. Linfield
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Abstract

We report a study of a far-infrared GaAs-Al/sub 0.15/Ga/sub 0.85/As quantum cascade electro-luminescence device designed to emit via both diagonal and vertical transitions. Each type of transition was preferentially chosen by varying the applied electric field. The different transitions were identified by correlation with bandstructure calculations, electrical characteristics and the width of the peaks. Further, the importance of contact resistance on the spectra was shown.
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量子级联发射器的对角线和垂直远红外跃迁
本文报道了一种远红外GaAs-Al/sub 0.15/Ga/sub 0.85/As量子级联电致发光器件的设计,该器件可以通过对角线和垂直跃迁发射。通过改变外加电场来优选每种类型的跃迁。通过与带结构计算、电特性和峰宽的相关性来识别不同的跃迁。进一步说明了接触电阻对光谱的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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