{"title":"InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth","authors":"R. Shau, G. Bohm, F. Kohler, M. Amann","doi":"10.1109/ISLC.2002.1041157","DOIUrl":null,"url":null,"abstract":"This paper presents VCSELs in the InGaAlAs-InP system that have been realized from 1.31 /spl mu/m to 1.8 /spl mu/m enabling the buried tunnel junction technology with particular emphasis on output power, operation temperature and modulation speed at 1.55 /spl mu/m, aiming for 10 Gbit/s transmission.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"66 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents VCSELs in the InGaAlAs-InP system that have been realized from 1.31 /spl mu/m to 1.8 /spl mu/m enabling the buried tunnel junction technology with particular emphasis on output power, operation temperature and modulation speed at 1.55 /spl mu/m, aiming for 10 Gbit/s transmission.
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