Correlating interface chemistry and device behavior

Abstract

The prospect of introducing alternative materials as a carrier transport channel in a variety of field effect devices has resulted in a resurgence of interface research. A key aspect includes the nature of the defects that influence the electrical behavior in the MOS gate stack, and their location. This invited talk will overview selected examples from our recent studies of III-V and 2D interfaces with high-k dielectrics and contacts using in-situ deposition and analysis methods. [1-73].