Design of Monolithic RF CMOS Sub-mW Self-Oscillating-Mixers

S. Fenni, F. Haddad, A. Slimane, R. Touhami, W. Rahajandraibe
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Abstract

In this paper, different topologies of RF self-oscillating mixers (SOM), stacking the voltage controlled oscillator (VCO) and the mixer on top of each other, are assessed. Their design considerations to address sub-mW operation suitable to ultra-low power applications are presented. Two configurations of SOM circuits are implemented in 130nm CMOS technology. The obtained results are presented and performances in terms of gain, noise, linearity, area, power consumption and stability over process and mismatch are compared and discussed.
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单片RF CMOS亚毫瓦自振荡混频器的设计
本文对压控振荡器(VCO)和混频器相互叠加的RF自振荡混频器(SOM)的不同拓扑进行了评估。介绍了它们的设计考虑,以解决适合超低功耗应用的亚兆瓦运行。两种配置的SOM电路在130纳米CMOS技术实现。给出了所得结果,并从增益、噪声、线性度、面积、功耗、过程稳定性和失配等方面进行了比较和讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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