DhiaElhak Messaoud, B. Djezzar, A. Benabdelmoumene, M. Boubaaya, Boumediene Zatout, A. Zitouni
{"title":"NBTI Fast Electrical Characterization in pMOSFET Devices","authors":"DhiaElhak Messaoud, B. Djezzar, A. Benabdelmoumene, M. Boubaaya, Boumediene Zatout, A. Zitouni","doi":"10.51485/AJSS.V6I1.3","DOIUrl":null,"url":null,"abstract":"To measure the entire characteristic of p-MOSFET, we have implemented the fast Ids-Vgs technique. The latter is used to study NBTI phenomenon with measure-stress-measure method, for electric field 5MV/cm < Eox < 7.5MV/cm, and temperatures 27°C < Ts < 120°C. Measurement time has reached 10 us, and a stress-measure delay (switching time) of about a hundred of milliseconds was obtained. However, strengths and weaknesses of the implemented technique have been discussed. Furthermore, the extraction methods: transconductance (Gm), subthreshold slope (SS), and mid-gap (MG), have been implemented and discussed as well. NBTI parameter i.e. Delta Vth, n, gamma and Ea were extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy Ea = 0.039 eV and a field factor gamma = 0.41 MV/cm for a stress time ts < 10 s have been obtained.","PeriodicalId":153848,"journal":{"name":"Algerian Journal of Signals and Systems","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Algerian Journal of Signals and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.51485/AJSS.V6I1.3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
To measure the entire characteristic of p-MOSFET, we have implemented the fast Ids-Vgs technique. The latter is used to study NBTI phenomenon with measure-stress-measure method, for electric field 5MV/cm < Eox < 7.5MV/cm, and temperatures 27°C < Ts < 120°C. Measurement time has reached 10 us, and a stress-measure delay (switching time) of about a hundred of milliseconds was obtained. However, strengths and weaknesses of the implemented technique have been discussed. Furthermore, the extraction methods: transconductance (Gm), subthreshold slope (SS), and mid-gap (MG), have been implemented and discussed as well. NBTI parameter i.e. Delta Vth, n, gamma and Ea were extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy Ea = 0.039 eV and a field factor gamma = 0.41 MV/cm for a stress time ts < 10 s have been obtained.