{"title":"Effect of nitrogen doping on electrical properties of amorphous carbon thin film prepared by aerosol-assisted thermal CVD","authors":"A. N. Fadzilah, M. Rusop","doi":"10.1109/ISIEA.2011.6108746","DOIUrl":null,"url":null,"abstract":"This paper reports on the effect of nitrogen doping of p-type semiconducting amorphous carbon (p-C) films fabricated onto the glass substrate by Aerosol-Assisted Thermal Chemical Vapor Deposition using natural source of camphor oil as the precursor material. From the characterization of the electrical properties using current-voltage (I–V) measurement, I–V graph was modeled. The analyze reveal that conductivity shows an increment in the N2 doped thin film, both in dark and under illumination condition. Other than that, optical and structural properties were also characterized by using UV-VIS-NIR system and Atomic Force Microscopy. The same trend of optical and electrical can be seen when the measurement from the Tauc's plot expose a decreasing value of optical band gap as temperature increase.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Symposium on Industrial Electronics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISIEA.2011.6108746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper reports on the effect of nitrogen doping of p-type semiconducting amorphous carbon (p-C) films fabricated onto the glass substrate by Aerosol-Assisted Thermal Chemical Vapor Deposition using natural source of camphor oil as the precursor material. From the characterization of the electrical properties using current-voltage (I–V) measurement, I–V graph was modeled. The analyze reveal that conductivity shows an increment in the N2 doped thin film, both in dark and under illumination condition. Other than that, optical and structural properties were also characterized by using UV-VIS-NIR system and Atomic Force Microscopy. The same trend of optical and electrical can be seen when the measurement from the Tauc's plot expose a decreasing value of optical band gap as temperature increase.