Theory of Dynamic Quenching of Photoconductivity and Luminescence

F. Matossi
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引用次数: 6

Abstract

The modification of photoconductivity or luminescence in CdS and ZnS semiconductors by infrared radiation or by electric fields has recently been investigated in some detail [1, 2, 3, 4, 5, 6,] The aspect of this phenomenon with which this paper is concerned is the “dynamic quenching” [3], that is the change of photoconductivity or luminescence with time while the quenching agent (infrared radiation or electric field) is applied or after its removal. Usually, the “quenching” is a superposition of stimulation effects and quenching proper.
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光电导率和发光的动态猝灭理论
红外辐射或电场对CdS和ZnS半导体的光导率或发光特性的影响近来有较详细的研究[1,2,3,4,5,6,],本文所关注的这方面现象是“动态猝灭”[3],即猝灭剂(红外辐射或电场)施加或去除后光导率或发光特性随时间的变化。通常,“猝灭”是刺激效应和猝灭本身的叠加。
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