S. McDougall, C. Ironside, A. C. Bryce, J. Marsh, B. Vogele, C. Stanley
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引用次数: 1
Abstract
The InGaAs-InAlGaAs quaternary quantum well material system forms an alternative to the conventional InGaAsP based diode lasers for use in 1.3µm and 1.55µm fibre optic systems. Larger conduction band offsets and a greater thermal stability compared to the InGaAsP system makes InAlGaAs material attractive for both high speed modulators [1] and room temperature high power lasers. In this paper we present the first demonstration to our knowledge of monolithic modelocking action from InGaAs-InAlGaAs laser diodes.
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