{"title":"Ultra-Low-Power Low Drop-Out (LDO) Voltage Regulator With Improved Power Supply Rejection","authors":"Hazem H. Hammam, H. Omran, S. Ibrahim","doi":"10.1109/NRSC52299.2021.9509816","DOIUrl":null,"url":null,"abstract":"Having a high-power supply rejection (PSR) over a wide range of frequencies is a very important specification for most of low-dropout voltage regulators (LDOs). A low-power LDO with 2 methods of high-frequency PSR and loop stability compensation techniques is presented in this paper. The proposed LDO achieves a high PSR over a wide frequency range with low power and small area consumption. The LDO is implemented in 65 nm CMOS technology and achieves a PSR better than 77 dB up to 30 MHz for output load currents up to 25 mA and a 4 μF output load capacitor. The design is suitable for capacitor loaded (Capped) LDOs with a wide output load current range up to 100 mA and output load capacitor range from 1 μF to 12 μF. The proposed LDO consumes a no-load quiescent current of 5 μA and an area of 400 μm × 200 μm.","PeriodicalId":231431,"journal":{"name":"2021 38th National Radio Science Conference (NRSC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 38th National Radio Science Conference (NRSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NRSC52299.2021.9509816","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Having a high-power supply rejection (PSR) over a wide range of frequencies is a very important specification for most of low-dropout voltage regulators (LDOs). A low-power LDO with 2 methods of high-frequency PSR and loop stability compensation techniques is presented in this paper. The proposed LDO achieves a high PSR over a wide frequency range with low power and small area consumption. The LDO is implemented in 65 nm CMOS technology and achieves a PSR better than 77 dB up to 30 MHz for output load currents up to 25 mA and a 4 μF output load capacitor. The design is suitable for capacitor loaded (Capped) LDOs with a wide output load current range up to 100 mA and output load capacitor range from 1 μF to 12 μF. The proposed LDO consumes a no-load quiescent current of 5 μA and an area of 400 μm × 200 μm.