Optimized Design and Manufacture of Wideband Pulsed Gamma-ray Sensors

Abstract

In this paper, we are proposing an optimal design of wideband pulsed type gamma-ray sensors. These sensors were manufactured based on the design results and after word electrical properties were analyzed. The sensor input parameters were derived on the basis of pulsed gamma-ray spectrum and time-dependent energy rate, and the output current which were derived on the basis of the sensor sensitivity control circuit. Pulsed gamma-ray sensors were designed using the TCAD simulators. The design results show that the optimal Epi layer thickness is 45um with the applied voltage 3.3V and the diameter is 2.0mm. The doping concentrations are as follows : N-type is an Arsenic as 1×10 19 /cm 3 , P-type is a Boron as 1×10 19 /cm 3 and Epi layer is Phosphorus as 3.4×10 12 /cm 3 . The fabricated sensor was a leakage current, 12pA at voltage – 3.3V and fully depleted mode at voltage – 5V. A test result of pulsed radiation shows that the sensor gives out the optimal photocurrent.