{"title":"A Microwave Model for the Dual-Gate GaAs MESFET","authors":"G. Mau","doi":"10.1109/MWSYM.1981.1129814","DOIUrl":null,"url":null,"abstract":"A simplified dual-gate GaAs FET microwave model consisting of a cascode connection of single-gate FET's is developed, tested for validity, and discussed herein. Computer generated S-parameters of the model are compared to those measured for an actual device in the 2 to 9 GHz frequency range.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129814","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A simplified dual-gate GaAs FET microwave model consisting of a cascode connection of single-gate FET's is developed, tested for validity, and discussed herein. Computer generated S-parameters of the model are compared to those measured for an actual device in the 2 to 9 GHz frequency range.
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