A 12-bit SAR ADC in 180 nm Technology for Smart Sensor Systems

Adrian Hofmann, Andreas Käberlein, Elias Kögel, Marco Ramsbeck, J. Horstmann
{"title":"A 12-bit SAR ADC in 180 nm Technology for Smart Sensor Systems","authors":"Adrian Hofmann, Andreas Käberlein, Elias Kögel, Marco Ramsbeck, J. Horstmann","doi":"10.1109/SSI52265.2021.9466967","DOIUrl":null,"url":null,"abstract":"High-level models serve their purpose for a time- and memory-efficient abstraction of the implementation and functionality of integrated circuits, but often experience high distinction between the transistor-level simulation and measurements. A 12-bit SAR ADC is designed as a high-level model as well as a transistor-level implementation in a 0.18 μm technology for smart sensor system applications. An accurate high-level model is developed and compared to actual transistor-level simulations as well as measurement results of the manufactured chip. Crucial design steps are shown to accurately design the high-level model and achieve a model that closely follows the behavior of the manufactured circuit, which can be used to highly accelerate the design process of smart sensor systems","PeriodicalId":382081,"journal":{"name":"2021 Smart Systems Integration (SSI)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Smart Systems Integration (SSI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSI52265.2021.9466967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

High-level models serve their purpose for a time- and memory-efficient abstraction of the implementation and functionality of integrated circuits, but often experience high distinction between the transistor-level simulation and measurements. A 12-bit SAR ADC is designed as a high-level model as well as a transistor-level implementation in a 0.18 μm technology for smart sensor system applications. An accurate high-level model is developed and compared to actual transistor-level simulations as well as measurement results of the manufactured chip. Crucial design steps are shown to accurately design the high-level model and achieve a model that closely follows the behavior of the manufactured circuit, which can be used to highly accelerate the design process of smart sensor systems
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于智能传感器系统的180nm技术的12位SAR ADC
高级模型的目的是对集成电路的实现和功能进行时间和内存效率的抽象,但通常在晶体管级模拟和测量之间存在很大的区别。12位SAR ADC设计为高级模型,并采用0.18 μm技术实现晶体管级,适用于智能传感器系统应用。建立了精确的高阶模型,并与实际的晶体管级仿真和制造芯片的测量结果进行了比较。给出了精确设计高级模型的关键设计步骤,并实现了与制造电路行为密切相关的模型,可用于大大加快智能传感器系统的设计过程
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Microcontroller Firmware Design for Industrial Wireless Sensors End-to-End Automation Frameworks for Mapping Neural Networks onto Embedded Devices and Early Performance Predictions: A Survey Adaptation and Optimization of Planar Coils for a More Accurate and Far-Reaching Magnetic Field-Based Localization in the Near Field Low-cost Sensor System for on-the-field Water Quality Analysis Electronic Component System to Achieve Climate Neutrality
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1