Adrian Hofmann, Andreas Käberlein, Elias Kögel, Marco Ramsbeck, J. Horstmann
{"title":"A 12-bit SAR ADC in 180 nm Technology for Smart Sensor Systems","authors":"Adrian Hofmann, Andreas Käberlein, Elias Kögel, Marco Ramsbeck, J. Horstmann","doi":"10.1109/SSI52265.2021.9466967","DOIUrl":null,"url":null,"abstract":"High-level models serve their purpose for a time- and memory-efficient abstraction of the implementation and functionality of integrated circuits, but often experience high distinction between the transistor-level simulation and measurements. A 12-bit SAR ADC is designed as a high-level model as well as a transistor-level implementation in a 0.18 μm technology for smart sensor system applications. An accurate high-level model is developed and compared to actual transistor-level simulations as well as measurement results of the manufactured chip. Crucial design steps are shown to accurately design the high-level model and achieve a model that closely follows the behavior of the manufactured circuit, which can be used to highly accelerate the design process of smart sensor systems","PeriodicalId":382081,"journal":{"name":"2021 Smart Systems Integration (SSI)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Smart Systems Integration (SSI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSI52265.2021.9466967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
High-level models serve their purpose for a time- and memory-efficient abstraction of the implementation and functionality of integrated circuits, but often experience high distinction between the transistor-level simulation and measurements. A 12-bit SAR ADC is designed as a high-level model as well as a transistor-level implementation in a 0.18 μm technology for smart sensor system applications. An accurate high-level model is developed and compared to actual transistor-level simulations as well as measurement results of the manufactured chip. Crucial design steps are shown to accurately design the high-level model and achieve a model that closely follows the behavior of the manufactured circuit, which can be used to highly accelerate the design process of smart sensor systems