{"title":"Small signal model of Cylindrical Surrounding Double-Gate MOSFET and its parameters","authors":"V. Srivastava","doi":"10.1109/ITACT.2015.7492672","DOIUrl":null,"url":null,"abstract":"The semiconductor devices are scaled into nanotechnology range and facing the short channel effects and subthreshold characteristics, which restrict the application of traditional planar devices. To solve these problems, a novel device geometries as double-gate MOSFET has been designed. In this work the double-gate model has been extended to design a Cylindrical Surrounding Double-Gate MOSFET and a small signal model of this MOSFET has been analyzed. With the help of this model the bias and geometry dependence of the various parametric components has been discussed.","PeriodicalId":336783,"journal":{"name":"2015 International Conference on Trends in Automation, Communications and Computing Technology (I-TACT-15)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Trends in Automation, Communications and Computing Technology (I-TACT-15)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITACT.2015.7492672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The semiconductor devices are scaled into nanotechnology range and facing the short channel effects and subthreshold characteristics, which restrict the application of traditional planar devices. To solve these problems, a novel device geometries as double-gate MOSFET has been designed. In this work the double-gate model has been extended to design a Cylindrical Surrounding Double-Gate MOSFET and a small signal model of this MOSFET has been analyzed. With the help of this model the bias and geometry dependence of the various parametric components has been discussed.
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