{"title":"Fabrication Of Amorphous Carbon Micro-Membranes By Deep Reactive Ion Etching Technique","authors":"Liujiang Yu, B. Tay, D. Sheeja, Y. Fu, J. Miao","doi":"10.1142/S1465876303001800","DOIUrl":null,"url":null,"abstract":"The primary problem of large intrinsic compressive stress induced during the deposition of amorphous carbon (a-C) films prepared by Filtered Cathodic Vacuum Arc (FCVA) technique has been overcome by preparing the films in conjuction with high substrate pulse biasing. However, it has been observed that the stress reduction is achieved by sacrificing the mechanical properties such as hardness and Young's modulus of the films. Hence the mechanical properties of the films were studied as a function of substrate bias voltage. In addition, to demostrate these low stress films, one-micron thick, a-C membranes were fabricated by photolithography technique together with deep reactive ion etching (deep RIE) and wet KOH etching.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Int. J. Comput. Eng. Sci.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S1465876303001800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The primary problem of large intrinsic compressive stress induced during the deposition of amorphous carbon (a-C) films prepared by Filtered Cathodic Vacuum Arc (FCVA) technique has been overcome by preparing the films in conjuction with high substrate pulse biasing. However, it has been observed that the stress reduction is achieved by sacrificing the mechanical properties such as hardness and Young's modulus of the films. Hence the mechanical properties of the films were studied as a function of substrate bias voltage. In addition, to demostrate these low stress films, one-micron thick, a-C membranes were fabricated by photolithography technique together with deep reactive ion etching (deep RIE) and wet KOH etching.
利用过滤阴极真空电弧(FCVA)技术制备非晶碳薄膜,克服了薄膜沉积过程中存在的固有压应力大的主要问题,并与高衬底脉冲偏置相结合。然而,已经观察到应力的减小是通过牺牲薄膜的硬度和杨氏模量等力学性能来实现的。因此,研究了薄膜的力学性能随衬底偏压的变化规律。此外,为了证明这些低应力薄膜,采用光刻技术与深度反应离子蚀刻(deep reactive ion etching, deep RIE)和湿式KOH蚀刻一起制备了1微米厚的a-C膜。