A. Drozdov, G. Khrypunov, V. O. Nikitin, A. Meriuts, M. Khrypunov, M. Kirichenko, R. Zaitsev
{"title":"Switching Effects from a High-Resistance State to a High Electrical Conductivity State in Mo/P-Cdte/Mo Structure","authors":"A. Drozdov, G. Khrypunov, V. O. Nikitin, A. Meriuts, M. Khrypunov, M. Kirichenko, R. Zaitsev","doi":"10.1109/IEPS51250.2020.9263081","DOIUrl":null,"url":null,"abstract":"The time-voltage characteristics of high-resistance Mo/p-CdTe/Mo structures under influence of single voltage pulses in range from 20 to 80 V and duration up to 30 ns were studied. We established that for high-resistivity Me-A2B6-Me structures, a restorable switching into a high electrical conductivity state can be realized as the effect of current pulses duration up to 30 ns and no more than 20 V voltage amplitude. It has been proposed the physical mechanism that leads to realizing switching effect. Such time-voltage characteristic allows to conclude that such Me-A2B6-Me structures is perspective for use as keys and switching elements of micro- and nanosystem technology.","PeriodicalId":235261,"journal":{"name":"2020 IEEE 4th International Conference on Intelligent Energy and Power Systems (IEPS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 4th International Conference on Intelligent Energy and Power Systems (IEPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEPS51250.2020.9263081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The time-voltage characteristics of high-resistance Mo/p-CdTe/Mo structures under influence of single voltage pulses in range from 20 to 80 V and duration up to 30 ns were studied. We established that for high-resistivity Me-A2B6-Me structures, a restorable switching into a high electrical conductivity state can be realized as the effect of current pulses duration up to 30 ns and no more than 20 V voltage amplitude. It has been proposed the physical mechanism that leads to realizing switching effect. Such time-voltage characteristic allows to conclude that such Me-A2B6-Me structures is perspective for use as keys and switching elements of micro- and nanosystem technology.