{"title":"Performance Comparison of Thin-Film Transistors Fabricated Using Different Purity Semiconducting Nanotubes","authors":"K. C. Narasimhamurthy, R. Paily","doi":"10.1109/VLSID.2011.59","DOIUrl":null,"url":null,"abstract":"In this paper, fabrication and characterization of semi conducting nanotube thin-film transistors (SN-TFTs) using 90% and 95% purity semi conducting single walled carbon nanotubes (SWCNTs) are presented. The wafer scale fabrication of SN-TFTs are carried out on 2 inch Si wafers. Pre-separated semi conducting SWCNTs are deposited on amino-silane treated Si/SiO2 surface. A simple method is suggested for silanization in order to improve the carbon nanotube density more than 30 nanotubes/¹m2. SN-TFTs fabricated using both 90% and 95% enriched semi conducting SWCNTs have exhibited p-type output characteristic with excellent linear and saturation region of operation along with high on-off current ratio and steep sub threshold slope.","PeriodicalId":371062,"journal":{"name":"2011 24th Internatioal Conference on VLSI Design","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 24th Internatioal Conference on VLSI Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSID.2011.59","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, fabrication and characterization of semi conducting nanotube thin-film transistors (SN-TFTs) using 90% and 95% purity semi conducting single walled carbon nanotubes (SWCNTs) are presented. The wafer scale fabrication of SN-TFTs are carried out on 2 inch Si wafers. Pre-separated semi conducting SWCNTs are deposited on amino-silane treated Si/SiO2 surface. A simple method is suggested for silanization in order to improve the carbon nanotube density more than 30 nanotubes/¹m2. SN-TFTs fabricated using both 90% and 95% enriched semi conducting SWCNTs have exhibited p-type output characteristic with excellent linear and saturation region of operation along with high on-off current ratio and steep sub threshold slope.
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