A fully integrated Class-D amplifier in 40nm CMOS with dynamic cascode bias and load current sensing

V. Binet, F. Amiard, E. Allier, S. Valcin, A. Nagari
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Abstract

To address in the same time high efficiency, high output power and high complexity functions for Signal Processing systems, the partitioning tends to integrate in the same chip some functions of the digital (like DSP) and audio amplifiers (like Class-D) in a deep submicron technology. To fulfill high output power demand without compromising the device's reliability constraints, the amplifier power-stage use cascoded structure. In this paper a new design aimed to decrease the power stage consumption adapting the cascode bias of power stage branches during its switching is presented without impacting the MOS device's reliability. In addition, a fully integrated load current sensing, independent from any process, package or temperature spread, suitable for Class-D speaker protection systems, is explained. The circuit has been implemented in 40nm CMOS technology.
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一个完全集成的d类放大器在40nm CMOS具有动态级联码偏置和负载电流传感
为了同时满足信号处理系统的高效率、高输出功率和高复杂功能,分划倾向于将数字放大器(如DSP)和音频放大器(如Class-D)的一些功能以深亚微米技术集成到同一芯片中。为了在不影响器件可靠性约束的情况下满足高输出功率需求,放大器功率级采用级联编码结构。本文提出了一种新的设计方案,在不影响MOS器件可靠性的前提下,利用功率级支路的级联偏置降低功率级功耗。此外,还解释了一个完全集成的负载电流传感,独立于任何工艺,封装或温度分布,适用于d类扬声器保护系统。该电路已在40nm CMOS技术中实现。
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