Physics based modeling of dark current in quantum dot using Haar wavelet method

Abstract

The influence of quantum dot density and applied voltage on the performance of InGaAs quantum dot is studied and presented. The device characteristics of the quantum dot are examined based on the exact potential and energy profile obtained from the solution of 3D Poisson and Schrodinger equations using Haar wavelets. The dark current is estimated by considering the quantum dot parameters, applied voltage and temperature. The physics based model is used to study the effect on the dark current resulting from changing the QD density, length of QD layer, number of QD layers and temperature. The results are validated with the existing experimental results that exhibit the strength of the proposed model. The physics based model is developed in general and can be used as a device for the photo detector and photovoltaic applications.