Alessandro Novello, Gabriele Atzeni, Giorgio Cristiano, Mathieu Coustans, Taekwang Jang
{"title":"A 2.3GHz Fully Integrated DC-DC Converter based on Electromagnetically Coupled Class-D LC Oscillators achieving 78.1% Efficiency in 22nm FDSOI CMOS","authors":"Alessandro Novello, Gabriele Atzeni, Giorgio Cristiano, Mathieu Coustans, Taekwang Jang","doi":"10.23919/VLSICircuits52068.2021.9492491","DOIUrl":null,"url":null,"abstract":"A fully integrated DC-DC converter based on electromagnetically coupled class-D LC oscillators achieving 0.42-3.2W/mm2 power density and 69.4-78.1% efficiency is demonstrated in a 22nm FDSOI CMOS technology. This work proposes on-chip 8-shaped and vertically stacked transformers, which are orthogonally placed for the high-power density, low undesired coupling coefficient and small electromagnetic interference (EMI) radiation. In addition, the output ripple is <10mV without attaching any output capacitor thanks to the 4-phase electromagnetic power delivery scheme. The converter also offers a duty cycled operation mode that enables <2% efficiency degradation down to 100μW. The total chip area is 0.59mm2 for 5.9nH inductance (high efficiency version) and 0.22mm2 for 3.9nH (high power density versions).","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSICircuits52068.2021.9492491","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A fully integrated DC-DC converter based on electromagnetically coupled class-D LC oscillators achieving 0.42-3.2W/mm2 power density and 69.4-78.1% efficiency is demonstrated in a 22nm FDSOI CMOS technology. This work proposes on-chip 8-shaped and vertically stacked transformers, which are orthogonally placed for the high-power density, low undesired coupling coefficient and small electromagnetic interference (EMI) radiation. In addition, the output ripple is <10mV without attaching any output capacitor thanks to the 4-phase electromagnetic power delivery scheme. The converter also offers a duty cycled operation mode that enables <2% efficiency degradation down to 100μW. The total chip area is 0.59mm2 for 5.9nH inductance (high efficiency version) and 0.22mm2 for 3.9nH (high power density versions).