{"title":"Optimizing SCAPS model for perovskite solar cell equivalent circuit with utilizing Matlab-based parasitic resistance estimator algorithm","authors":"Ahmed A. Eid, Zahraa S. Ismail, S. Abdellatif","doi":"10.1109/NILES50944.2020.9257929","DOIUrl":null,"url":null,"abstract":"Perovskite solar cells (PSCs) showed a booming trend due to its tunability as well as simplicity in fabrication. Researchers invested in exploring an appropriate equivalent circuit capable of describing the J-V curves of the PSCs as well as illustrating the physical phenomena associated with optical absorption and carrier transportation. In the same context, we propose a modified SCAPS model to demonstrate the optoelectronic behavior of PSCs through estimating the parasitic elements in the form of resistive and capacitive components. A previously reported PSC was selected as a reference where our enhanced model recorded only 4% mismatching. J-V, E-K and C-V curves have been simulated and analyzed where the appearance of the capacitive impact due to E-K charge accumulation has been addressed.","PeriodicalId":253090,"journal":{"name":"2020 2nd Novel Intelligent and Leading Emerging Sciences Conference (NILES)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 2nd Novel Intelligent and Leading Emerging Sciences Conference (NILES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NILES50944.2020.9257929","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
Perovskite solar cells (PSCs) showed a booming trend due to its tunability as well as simplicity in fabrication. Researchers invested in exploring an appropriate equivalent circuit capable of describing the J-V curves of the PSCs as well as illustrating the physical phenomena associated with optical absorption and carrier transportation. In the same context, we propose a modified SCAPS model to demonstrate the optoelectronic behavior of PSCs through estimating the parasitic elements in the form of resistive and capacitive components. A previously reported PSC was selected as a reference where our enhanced model recorded only 4% mismatching. J-V, E-K and C-V curves have been simulated and analyzed where the appearance of the capacitive impact due to E-K charge accumulation has been addressed.