Chaojiong Wei, Xiaojun Xie, Yongtao Du, Ziyun Wang, J. Ye, Z. Zeng, X. Zou, Lian-shan Yan
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引用次数: 1
Abstract
We experimentally demonstrate >110 GHz charge-compensated modified uni-traveling carrier (CC-MUTC) photodiodes by flip-chip bonding on diamond submount. The typical dark current is ~200 nA at −3 V bias voltage and the measured responsivity reaches 0.15 A/W. Photodiodes with 6-μm, 8-μm, and 10-μm diameter exhibit 3-dB bandwidths of >110 GHz, 90 GHz, and 80 GHz, respectively. The RF output power reaches 8.4 dBm at 90 GHz at room temperature.
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