{"title":"Evaporated AgBr as an x-ray sensitive layer in a two-layer resist system for x-ray lithography","authors":"J. Lavine, J. Masters, A. Das","doi":"10.1109/IEDM.1980.189855","DOIUrl":null,"url":null,"abstract":"Exposure of 2000 Å films of evaporated AgBr to 7 Å x-rays produced developable Ag images with 5 µJ/cm2of x-ray energy. The optical density of developed AgBr films vs. x-ray intensity produced a log-linear dependence in the range of 10 to 5000µJ/cm2with a gamma of 0.18. The extraordinary x-ray speed of evaporated AgBr stems both from photographic development, which multiplies the Ag latent image by a factor of ∼105, and by virtue of the relatively heavy atoms which provide a calculated mass absorption coefficient of 32% from a 2000 å film. We have also exposed a special two-layer resist system consisting of AgBr/polymer on Si through an x-ray mask consisting of Ti membrane with Au as the opaque material. In previous work (1), we have shown that the photographically generated Ag image provides a very good mask for plasma etching polymer.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"144 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Exposure of 2000 Å films of evaporated AgBr to 7 Å x-rays produced developable Ag images with 5 µJ/cm2of x-ray energy. The optical density of developed AgBr films vs. x-ray intensity produced a log-linear dependence in the range of 10 to 5000µJ/cm2with a gamma of 0.18. The extraordinary x-ray speed of evaporated AgBr stems both from photographic development, which multiplies the Ag latent image by a factor of ∼105, and by virtue of the relatively heavy atoms which provide a calculated mass absorption coefficient of 32% from a 2000 å film. We have also exposed a special two-layer resist system consisting of AgBr/polymer on Si through an x-ray mask consisting of Ti membrane with Au as the opaque material. In previous work (1), we have shown that the photographically generated Ag image provides a very good mask for plasma etching polymer.
将蒸发的2000 Å AgBr薄膜暴露在7 Å x射线下，产生可显影的Ag图像，x射线能量为5µJ/cm2。开发的AgBr薄膜的光密度与x射线强度在10至5000µJ/cm2范围内产生对数线性关系，gamma为0.18。蒸发AgBr的非凡x射线速度源于照相显影，它将银的潜在图像乘以一个系数~ 105，并且由于相对较重的原子，从2000个胶片中提供计算的质量吸收系数为32%。我们还通过以Au为不透明材料的Ti膜组成的x射线掩膜，在Si上暴露了由AgBr/聚合物组成的特殊双层抗蚀剂体系。在之前的工作(1)中，我们已经证明照相生成的Ag图像为等离子体蚀刻聚合物提供了非常好的掩膜。
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