{"title":"High Performance Gate-Driver Power Supply for Multilevel-based 1500 V Converters","authors":"E. Serban, Mohammad Ali Saket, M. Ordonez","doi":"10.1109/ECCE44975.2020.9235479","DOIUrl":null,"url":null,"abstract":"Power semiconductor devices require advanced pulse-width gate-driver capability to successfully convert power for high performance operation. In this paper, a simplified forward isolated converter topology with an integrated planar transformer is proposed, which eliminates the need of output filter inductor while rearranging the clamp circuit for reduced components ratings and voltage stress in a cost-effective solution. The proposed single-switch forward converter topology employs switch protection and transformer core demagnetization with Zener diode voltage-clamped circuit. Through the converter analysis, the switching frequency has been selected in relationship to the transformer inductance and the equivalent circuit capacitance for the benefit of soft-switching devices transitions. The converter features multiple isolated secondaries necessary for independent gate-driver voltage supplies in multi-level converters. Specifically, the proposed converter provides voltage supplies for a gate-driver power devices pair, such as half-bridge SiC devices. The integrated solution reduces the total number of gate-drivers transformers necessary in multilevel-based 1500V converters. The simulation and experimental results are obtained from a gate-drive application platform to demonstrate the validity of the proposed isolated dc-dc converter design with integrated planar transformer.","PeriodicalId":433712,"journal":{"name":"2020 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Energy Conversion Congress and Exposition (ECCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCE44975.2020.9235479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Power semiconductor devices require advanced pulse-width gate-driver capability to successfully convert power for high performance operation. In this paper, a simplified forward isolated converter topology with an integrated planar transformer is proposed, which eliminates the need of output filter inductor while rearranging the clamp circuit for reduced components ratings and voltage stress in a cost-effective solution. The proposed single-switch forward converter topology employs switch protection and transformer core demagnetization with Zener diode voltage-clamped circuit. Through the converter analysis, the switching frequency has been selected in relationship to the transformer inductance and the equivalent circuit capacitance for the benefit of soft-switching devices transitions. The converter features multiple isolated secondaries necessary for independent gate-driver voltage supplies in multi-level converters. Specifically, the proposed converter provides voltage supplies for a gate-driver power devices pair, such as half-bridge SiC devices. The integrated solution reduces the total number of gate-drivers transformers necessary in multilevel-based 1500V converters. The simulation and experimental results are obtained from a gate-drive application platform to demonstrate the validity of the proposed isolated dc-dc converter design with integrated planar transformer.