{"title":"On the parameter extraction of short channel UTBB-FDSOI FET’s with high-κ metal gate and TCAD modelling","authors":"L. Trojman, A. Vaca, L. Prócel","doi":"10.1109/INTERCON.2018.8526445","DOIUrl":null,"url":null,"abstract":"In this work an extraction method is proposed to obtain the electric and physical parameters of Ultra-Thin Body and Buried Oxide (UTBB) Fully Depleted SOI MOSFET with short channel length (below 100 nm). In order to check the accuracy of the extraction method, model is built using a TCAD with these parameters. We found that the simulation shows a very good agreement with the experimental curves. However, an improvement of the mobility model and a better definition of the extension of the model used in the TCAD is needed to get a perfect matching between the experimental and the simulated curves.","PeriodicalId":305576,"journal":{"name":"2018 IEEE XXV International Conference on Electronics, Electrical Engineering and Computing (INTERCON)","volume":"24 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE XXV International Conference on Electronics, Electrical Engineering and Computing (INTERCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTERCON.2018.8526445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work an extraction method is proposed to obtain the electric and physical parameters of Ultra-Thin Body and Buried Oxide (UTBB) Fully Depleted SOI MOSFET with short channel length (below 100 nm). In order to check the accuracy of the extraction method, model is built using a TCAD with these parameters. We found that the simulation shows a very good agreement with the experimental curves. However, an improvement of the mobility model and a better definition of the extension of the model used in the TCAD is needed to get a perfect matching between the experimental and the simulated curves.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
