{"title":"Response of MOSFETs from DMILL technology to high total dose levels","authors":"J.M. Armani, C. Brisset, F. Joffre, M. Dentan","doi":"10.1109/RADECS.1999.858595","DOIUrl":null,"url":null,"abstract":"We have investigated the response of MOS transistors fabricated using the DMILL process and irradiated to a total dose of 1MGy(Si)/sup 1/ with a /sup 60/Co source. Results show that parameter shifts remain limited, thus authorizing use of this technology in environments involving very high levels of radiation.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1999.858595","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
We have investigated the response of MOS transistors fabricated using the DMILL process and irradiated to a total dose of 1MGy(Si)/sup 1/ with a /sup 60/Co source. Results show that parameter shifts remain limited, thus authorizing use of this technology in environments involving very high levels of radiation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
