A Modified Current Mode Bandgap Reference with 15.1ppm/0C Temp Coefficient in 28nm CMOS

R. Nagulapalli, Immanuel Raja
{"title":"A Modified Current Mode Bandgap Reference with 15.1ppm/0C Temp Coefficient in 28nm CMOS","authors":"R. Nagulapalli, Immanuel Raja","doi":"10.1109/CONECCT55679.2022.9865728","DOIUrl":null,"url":null,"abstract":"Conventional Sub-1V bandgap reference circuit does not provide PTAT current and it has several stable operating points. All of the existing problems are explained intuitively in this paper. A modified sub-1V reference circuit was proposed, by injecting the PTAT current into a BJT and potential divider. Also, residual systematic offset is one of the major temperature coefficient contributor. In this work a novel currentmirror based self-biased opamp has been proposed which minimized the systematic offset by more 36%. A prototype has been developed in 28nm and post-layout simulations are presented. The minimum VDD is 1V while providing 450mV reference voltage with a line regulation of 1.2%. A temperature coefficient of 15.1ppm/0C has been achieved over the industrial range of -40 to 1250C. The circuit draws 25uA at high temperature and occupies 1192um2 silicon area.","PeriodicalId":380005,"journal":{"name":"2022 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CONECCT55679.2022.9865728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

Conventional Sub-1V bandgap reference circuit does not provide PTAT current and it has several stable operating points. All of the existing problems are explained intuitively in this paper. A modified sub-1V reference circuit was proposed, by injecting the PTAT current into a BJT and potential divider. Also, residual systematic offset is one of the major temperature coefficient contributor. In this work a novel currentmirror based self-biased opamp has been proposed which minimized the systematic offset by more 36%. A prototype has been developed in 28nm and post-layout simulations are presented. The minimum VDD is 1V while providing 450mV reference voltage with a line regulation of 1.2%. A temperature coefficient of 15.1ppm/0C has been achieved over the industrial range of -40 to 1250C. The circuit draws 25uA at high temperature and occupies 1192um2 silicon area.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种温度系数为15.1ppm/0C的28nm CMOS电流模带隙基准
传统的Sub-1V带隙参考电路不提供PTAT电流,它有几个稳定的工作点。本文对存在的问题进行了直观的解释。提出了一种改进的sub-1V参考电路,将PTAT电流注入BJT和电位分压器。此外,剩余的系统偏移量也是温度系数的主要贡献者之一。在这项工作中,提出了一种新的基于电流镜的自偏置opamp,它将系统偏移最小化了36%以上。开发了28nm的原型,并进行了布局后的仿真。最小VDD为1V,同时提供450mV参考电压,线稳压为1.2%。在-40至1250C的工业范围内,温度系数为15.1ppm/0C。该电路在高温下耗电25uA,硅面积1192um2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Signal Integrity Issues in FPGA based multi-motor microstepping Drives Organ Bank Based on Blockchain A Novel Deep Architecture for Multi-Task Crowd Analysis Convolutional Neural Network-based ECG Classification on PYNQ-Z2 Framework Improved Electric Vehicle Digital Twin Performance Incorporating Detailed Lithium-ion Battery Model
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1