{"title":"The Electrical Properties of Schottky Barrier Diode Structures Based on HVPE Grown Sn Dopped Ga2O3 Layers","authors":"A. Ivanov, A. Kremleva, S. Sharofidinov","doi":"10.17586/2687-0568-2022-4-1-33-38","DOIUrl":null,"url":null,"abstract":"We report on the analysis of the electrical properties of Schottky barrier diode structures based on gallium oxide (Ga2O3). Ga2O3 has been grown by chloride-hydride vapor phase epitaxy on Al2O3 substrate. Samples with different amounts of Sn impurity are experimentally characterized. Surface and cross-sectional scanning electron microscopy images, X-ray diffraction patterns and current-voltage characteristics of Ga2O3 layers both with and without contact pads are presented. The value of the Ga2O3 optimal doping is determined and the parameters of the surface treatment that is performed before the contact pads deposition are established.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Reviews on Advanced Materials and Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.17586/2687-0568-2022-4-1-33-38","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report on the analysis of the electrical properties of Schottky barrier diode structures based on gallium oxide (Ga2O3). Ga2O3 has been grown by chloride-hydride vapor phase epitaxy on Al2O3 substrate. Samples with different amounts of Sn impurity are experimentally characterized. Surface and cross-sectional scanning electron microscopy images, X-ray diffraction patterns and current-voltage characteristics of Ga2O3 layers both with and without contact pads are presented. The value of the Ga2O3 optimal doping is determined and the parameters of the surface treatment that is performed before the contact pads deposition are established.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
