R. Pilard, D. Gloria, F. Gianesello, F. Le Pennec, C. Person
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引用次数: 3
Abstract
A co-integrated Low Noise Amplifier (LNA) with a dipole antenna is designed considering a millimeter-wave dedicated BiCMOS technology. The targeted application is a 94 GHz passive imaging for security applications. The LNA is based on a high-speed SiGe:C 130 nm HBT. The interest of the co-integration on a common silicon substrate is demonstrated through the decrease of insertion losses between the antenna and the amplifier. The capability of the BiCMOS9MW technology is illustrated to achieve this co-integration reaching a total gain of 3.0 dB (Gantenna + GLNA) for a power consumption of 11 mW, in a single-stage LNA configuration. A two-stage configuration achieves a total gain of 8.5 dB with a power consumption of 21 mW.
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