M. Mehta, V. Jayaraman, A. Jackson, Shaomin Wu, Y. Okuno, J. Piprek, J. Bowers
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引用次数: 1
Abstract
We introduce a scheme incorporating wafer bonding and tunnel junctions to improve the performance long-wavelength Vertical Cavity Surface Emitting Lasers (VCSELs). Through careful design of PL-mode offset, mirror reflectivity, and aperture definition, we achieve lasing to 134°C, output power above 2 mW, single-mode output power at 80°C above 1 mW, and differential efficiencies of 46%. We achieve lasing at wavelengths as high as 1336 nm and show a versatile design that can be applied to any VCSEL functioning at long wavelengths.
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