Performance Analysis of SiSn Based High Efficiency p-n Junction Solar Cell

Abstract

We presented here the theoretical study on the performance parameters of Si0.88Sn0.12 p-n junction solar cell. A detailed description of the dependences of short circuit current density $\boldsymbol{(Jsc),}$ open circuit voltage $\boldsymbol{(V oc),}$ fill factor $\boldsymbol{(FF)}$ and conversion efficiency $\boldsymbol{(\eta)}$ on the diffusion lengths of both electron $(L_{n})$ and hole $(L_{p})$ has been illustrated. We also demonstrated in depth the effect of generation rate of charge carrier as well as temperature on the $\boldsymbol{J-V}$ and $\boldsymbol{P-V}$ characteristics of SiSn solar cell at the room temperature. The estimated results revealed that the p-n junction solar cell using Si0.88Sn0.12alloy gives $\mathbf{{J}_{\text{sc}}\sim 39.6\text{mA}/\text{cm},^{2}\mathrm{V}_{\mathrm{o}\mathrm{c}}\sim 0.89\mathrm{V}, \text{FF}\sim 0.828}$ and the maximum efficiency $\mathbf{\eta\sim 29.19\%}$. Short circuit current density and open circuit voltage are found to be strongly dependent on the generation rate and the diffusion length of electrons and holes for $\mathbf{Si_{1-x}Sn_{x}.}$ In particular, the sustainability of SiSn alloy as an active photovoltaic material is assessed here by analyzing different performance parameters.