Analytical Solutions Of Minimum Ionization Particle Induced Current Shapes Of Silicon Detectors And Simulation Of Charge Collection Properties

Abstract

A new analytical, one dimensional method to obtain the induced current shapes and simulation of chasrge shapes for p{sup +} {minus}n{minus}n{sup +} silicon detectors in the case of minimum ionization particle has been developed here. jExact solutions have been found for both electron and hole current shapes. Simulations of induced charge shapes of detectors have also been given. The results of this work are consistent with the earlier work where a semi-analytical method had been used.