{"title":"The current mirror thermal characterization method and its implementation in a power SOI BJT process","authors":"Jonggook Kim, Yun Liu, J. De Santis, D. Brisbin","doi":"10.1109/BIPOL.2004.1365806","DOIUrl":null,"url":null,"abstract":"A new current mirror method is described that can be used to evaluate thermal issues in silicon-on-insulator (SO0 bipolar junction transistors (BJTs). This method is compared to conventional transistor level techniques ond is shown to significantly improve safe operating area (SOA) measurement sensitiviq. Unlike conventional metho&, the current mirror method can provide quantitative analysis of the BJTs thermal instabiliQ over a wide power range, even in the apparent SOA of the device. Also, this method can predict and evaluate SOA with respect to emitter ballast resistance and current crowding.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365806","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A new current mirror method is described that can be used to evaluate thermal issues in silicon-on-insulator (SO0 bipolar junction transistors (BJTs). This method is compared to conventional transistor level techniques ond is shown to significantly improve safe operating area (SOA) measurement sensitiviq. Unlike conventional metho&, the current mirror method can provide quantitative analysis of the BJTs thermal instabiliQ over a wide power range, even in the apparent SOA of the device. Also, this method can predict and evaluate SOA with respect to emitter ballast resistance and current crowding.
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