Quality Assessment of 980 nm GaAs Based Laser Diodes with Use of Low-Frequency Noise Measurements

Xiaojuan Chen, Chang Qu
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Abstract

Low-frequency noise has always been a fast and non-destructive tool to characterise the performance and quality of materials and electrical devices. In this paper, a nondestructive method of predicting reliability was introduced for 980 nm GaAs based semiconductor laser diodes. Measurement and analysis were carried out for the noise and transport characteristics of forward voltage biases. The results demonstrated a close relationship between LD quality and the characteristic parameters of low-frequency noise such as frequency exponent, noise intensity and amplitude.
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基于低频噪声测量的980 nm GaAs激光二极管的质量评估
低频噪声一直是表征材料和电气设备性能和质量的快速和非破坏性工具。介绍了一种980 nm GaAs基半导体激光二极管可靠性无损预测方法。对正向偏置电压的噪声和输运特性进行了测量和分析。结果表明,LD质量与低频噪声的频率指数、噪声强度和幅值等特征参数密切相关。
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