Development of an efficient IGBT simulation model

Abstract

We propose, in this paper, the development of an efficient IGBT model especially designed for simulation and the associated free wheeling diode model that can describe the recovery current. Although, the IGBT model can describe the switching mechanism with a good precision, a procedure is presented in order to make this model able to reproduce better switching losses. Both models have the advantage to be configured exclusively from the datasheets and are built as electrical circuits, which can be realized easily in classical simulators.